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Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

Buckwell, M; Montesi, L; Hudziak, S; Mehonic, A; Kenyon, AJ; (2015) Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM. Nanoscale , 7 (43) pp. 18030-18035. 10.1039/c5nr04982b. Green open access

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Abstract

We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material.

Type: Article
Title: Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
Location: England
Open access status: An open access version is available from UCL Discovery
DOI: 10.1039/c5nr04982b
Publisher version: http://dx.doi.org/10.1039/c5nr04982b
Language: English
Additional information: Open Access Article. This Open Access Article is licensed under a Creative Commons Attribution 3.0 Unported Licence
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1474781
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