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The Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells

Lam, P; (2014) The Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells. IET Optoelectronics Green open access

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Abstract

The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm-2 for as-grown sample to 5.8 mA cm-2. We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal anneal treatment of QDSCs is demonstrated as a simple route for achieving improved device performance.

Type: Article
Title: The Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells
Event: IET
Open access status: An open access version is available from UCL Discovery
Language: English
Additional information: This paper is a preprint of a paper accepted by IET Optoelectronics and is subject to Institution of Engineering and Technology Copyright. When the final version is published, the copy of record will be available at IET Digital Library
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1458039
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