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Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD

Potts, SE; Carmalt, CJ; Blackman, CS; Abou-Chahine, F; Leick, N; Kessels, WMM; ... Heys, PN; + view all (2010) Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD. INORG CHIM ACTA , 363 (6) 1077 - 1083. 10.1016/j.ica.2009.07.004.

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Abstract

Low pressure chemical vapour deposition (LPCVD) of [ZrCp2(NMe2)(2)] (1), [ZrCp2(eta(2)-MeNCH2CH2NMe)] (2), [ZrCp2'(NMe2)(2)] (3) and [ZrCp2'(NEt2)(2)] (4) (Cp = eta(5)-cyclopentadienyl, Cp' = eta(5)-monomethylcyclopentadienyl), onto glass substrates at 600 degrees C, afforded highly reflective and adhesive films of zirconium carbide and amorphous carbon. Powder XRD indicated that the films were largely amorphous, although small, broad peaks accounting for ZrC and ZrO2 were present, suggesting that the remaining carbon was due to amorphous deposits from the cyclopentadienyl ligands. SEM images showed an island-growth mechanism with distinct crevices between the concentric nodules. Plasma-enhanced atomic layer deposition (PEALD) of compounds 1 and 2 showed that the precursors were not sufficiently stable or volatile to give a good rate of film growth. (C) 2009 Elsevier B.V. All rights reserved.

Type:Article
Title:Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD
DOI:10.1016/j.ica.2009.07.004
Keywords:Zirconium amide, CVD, ALD, Zirconium carbide, Zirconium nitride, NITRIDE THIN-FILMS, CHEMICAL-VAPOR-DEPOSITION, ATOMIC LAYER DEPOSITION, TITANIUM IMIDO COMPLEXES, DUAL SOURCE APCVD, GUANIDINATE COMPLEXES, HAFNIUM, MOCVD, CARBONITRIDE, TIN
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry

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