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Spins in silicon MOSFETs: electron spin relaxation and hyperpolarization of nuclear spin

Lo, CC; Weis, CD; van Tol, J; Bokor, J; Schenkel, T; Morton, JJL; (2013) Spins in silicon MOSFETs: electron spin relaxation and hyperpolarization of nuclear spin. In: Drouhin, HJ and Wegrowe, JE and Razeghi, M, (eds.) (Proceedings) SPIE Symposium on Spintronics VI. SPIE-INT SOC OPTICAL ENGINEERING

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Type: Proceedings paper
Title: Spins in silicon MOSFETs: electron spin relaxation and hyperpolarization of nuclear spin
Event: SPIE Symposium on Spintronics VI
Location: San Diego, CA
Dates: 25 August 2013 - 29 August 2013
DOI: 10.1117/12.2023595
Keywords: Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, silicon, MOSFET, spintronics, spin relaxation, quantum computation, hyperpolarization, electron spin resonance, electrically detected magnetic resonance, RESONANCE EXPERIMENTS, MAGNETIC-RESONANCE, TRANSPORT, STORAGE, MEMORY, DONORS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1427216
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