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Transport behavior of holes in boron delta-doped diamond structures

Balmer, RS; Friel, I; Hepplestone, S; Isberg, J; Uren, MJ; Markham, ML; Palmer, NL; ... Lang, R; + view all (2013) Transport behavior of holes in boron delta-doped diamond structures. Journal of Applied Physics , 113 (3) 033702-033702. 10.1063/1.4775814.

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Abstract

Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schr€dinger-Poisson and relaxation time o calculations based upon application of Fermi’s golden rule. A two carrier-type model was developed with an activation energy of $0.2 eV between the delta layer lowest subband with mobility $1 cm2/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm2/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.

Type: Article
Title: Transport behavior of holes in boron delta-doped diamond structures
DOI: 10.1063/1.4775814
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1414855
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