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Quantum conductance in silicon oxide resistive memory devices.

Mehonic, A; Vrajitoarea, A; Cueff, S; Hudziak, S; Howe, H; Labbé, C; Rizk, R; ... Kenyon, AJ; + view all (2013) Quantum conductance in silicon oxide resistive memory devices. Sci Rep , 3 , Article 2708. 10.1038/srep02708. Green open access

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Abstract

Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quantisation of device conductance into multiples of the fundamental unit of conductance, G0. Such quantum effects appear when the constriction diameter approaches the Fermi wavelength of the electron in the medium - typically several nanometres. Here we find that the conductance of silicon-rich silica (SiOx) resistive switches is quantised in half-integer multiples of G0. In contrast to other resistive switching systems this quantisation is intrinsic to SiOx, and is not due to drift of metallic ions. Half-integer quantisation is explained in terms of the filament structure and formation mechanism, which allows us to distinguish between systems that exhibit integer and half-integer quantisation.

Type: Article
Title: Quantum conductance in silicon oxide resistive memory devices.
Location: England
Open access status: An open access version is available from UCL Discovery
DOI: 10.1038/srep02708
Publisher version: http://dx.doi.org/10.1038/srep02708
Language: English
Additional information: This work is licensed under a Creative Commons Attribution 3.0 Unported license. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0 PMCID: PMC3776960
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1406363
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