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Tuning of the Sensitivity of Porous Silicon JFET Gas Sensors

Barillaro, G; Strambini, LM; Lazzerini, GM; (2009) Tuning of the Sensitivity of Porous Silicon JFET Gas Sensors. In: Pardo, M and Sberveglieri, G, (eds.) OLFACTION AND ELECTRONIC NOSE, PROCEEDINGS. (pp. 394 - 397). AMER INST PHYSICS

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Abstract

In this work, electrical tuning of the sensitivity of an integrated solid-state gas sensor is demonstrated. The sensor, namely PSJFET - Porous Silicon Junction Field Effect Transistor, consists of a p-channel JFET with an additional PS sensing gate on its top. The sensor current value is proportional to the NO2 concentration in the environment, that is I-DS=S center dot[NO2], at least in the range investigated (between 100 ppb and 500 ppb). Interestingly, and differently from most of gas sensors reported in the literature, the normalized sensor sensitivity S=dI(DS)/(I-DS0 center dot d[NO2]) can be effectively tuned by changing the voltage value of the electrical gate terminal of the JFET device. This feature allows the fabrication of gas sensors with superior performances: for example, it can be exploited to compensate for aging-induced degradation of the sensitivity during the sensor life-time. It is worthy of mentioning that, such an effect can be obtained without any increase of the sensor power dissipation, due to the high impedance of the gate terminal of the PSJFET.

Type: Proceedings paper
Title: Tuning of the Sensitivity of Porous Silicon JFET Gas Sensors
Event: 13th International Symposium on Olfaction and the Electronic Nose
Location: Brescia, ITALY
Dates: 2009-04-15 - 2009-04-17
ISBN-13: 978-0-7354-0674-2
Keywords: Porous Silicon, Integrated Gas Sensor, Sensitivity Tuning, CMOS-compatibility, LAYER
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/140426
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