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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Jeon, S; Ahn, S-E; Song, I; Kim, CJ; Chung, U-I; Lee, E; Yoo, I; ... Kim, K; + view all (2012) Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. NATURE MATERIALS , 11 (4) pp. 301-305. 10.1038/NMAT3256.

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Type: Article
Title: Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
DOI: 10.1038/NMAT3256
Keywords: Science & Technology, Physical Sciences, Technology, Chemistry, Physical, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Materials Science, Physics, THIN-FILM TRANSISTORS, FABRICATION, TRANSPORT, DISORDER
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1400561
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