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How to Achieve Ultra High Photoconductive Gain for Transparent Oxide Semiconductor Image Sensors

Lee, S; Jeon, S; Robertson, J; Nathan, A; (2012) How to Achieve Ultra High Photoconductive Gain for Transparent Oxide Semiconductor Image Sensors. In: (Proceedings) IEEE International Electron Devices Meeting (IEDM). IEEE

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Type: Proceedings paper
Title: How to Achieve Ultra High Photoconductive Gain for Transparent Oxide Semiconductor Image Sensors
Event: IEEE International Electron Devices Meeting (IEDM)
Location: San Francisco, CA
Dates: 10 December 2012 - 13 December 2012
ISBN-13: 978-1-4673-4872-0
Keywords: Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, THIN-FILM TRANSISTORS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1400555
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