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High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

Looi, HJ; Pang, LYS; Wang, Y; Whitfield, MD; Jackman, RB; (1998) High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond. DIAMOND AND RELATED MATERIALS , 7 (2-5) 565 - 568.

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Abstract

Polycrystalline CVD diamond films with a near-surface hydrogenated layer have been used to form the first normally off enhancement mode MESFET structures from this material. A room temperature transconductance of 0.14 mS mm(-1) has been measured, the highest yet reported for a transistor structure made from polycrystalline material. The devices fully turn off, display current saturation and have a low gate leakage. Aluminium forms a near-ideal Schottky barrier on this material (SBH similar to 0.98 eV, ideality 1.1) and was used as the gate metallisation within the MESFET. Optimised forms of these structures would appear to offer a commercially viable route to high-performance, diamond-based electronic circuits. (C) 1998 Elsevier Science S.A.

Type: Article
Title: High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond
Location: EDINBURGH, SCOTLAND
Keywords: metal-semiconductor, field effect, transistor, polycrystalline, diamond
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/139013
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