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Quantum engineering at the silicon surface using dangling bonds.

Schofield, SR; Studer, P; Hirjibehedin, CF; Curson, NJ; Aeppli, G; Bowler, DR; (2013) Quantum engineering at the silicon surface using dangling bonds. Nat Commun , 4 , Article 1649. 10.1038/ncomms2679. Green open access

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Abstract

Individual atoms and ions are now routinely manipulated using scanning tunnelling microscopes or electromagnetic traps for the creation and control of artificial quantum states. For applications such as quantum information processing, the ability to introduce multiple atomic-scale defects deterministically in a semiconductor is highly desirable. Here we use a scanning tunnelling microscope to fabricate interacting chains of dangling bond defects on the hydrogen-passivated silicon (001) surface. We image both the ground-state and the excited-state probability distributions of the resulting artificial molecular orbitals, using the scanning tunnelling microscope tip bias and tip-sample separation as gates to control which states contribute to the image. Our results demonstrate that atomically precise quantum states can be fabricated on silicon, and suggest a general model of quantum-state fabrication using other chemically passivated semiconductor surfaces where single-atom depassivation can be achieved using scanning tunnelling microscopy.

Type: Article
Title: Quantum engineering at the silicon surface using dangling bonds.
Location: England
Open access status: An open access version is available from UCL Discovery
DOI: 10.1038/ncomms2679
Publisher version: http://dx.doi.org/10.1038/ncomms2679
Language: English
Additional information: © 2013 Macmillan Publishers Limited. All Rights Reserved. This work is licensed under a Creative Commons Attribution- NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/ PMCID: PMC3644071
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1389952
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