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THE GROWTH OF NUCLEATION LAYERS FOR HIGH-QUALITY DIAMOND CVD FROM AN RF PLASMA

JACKMAN, RB; BECKMAN, J; FOORD, JS; (1995) THE GROWTH OF NUCLEATION LAYERS FOR HIGH-QUALITY DIAMOND CVD FROM AN RF PLASMA. DIAMOND AND RELATED MATERIALS , 4 (5-6) pp. 735-739. 10.1016/0925-9635(94)05225-5.

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Type: Article
Title: THE GROWTH OF NUCLEATION LAYERS FOR HIGH-QUALITY DIAMOND CVD FROM AN RF PLASMA
Location: IL CIOCCO, ITALY
DOI: 10.1016/0925-9635(94)05225-5
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, RF PLASMA CVD, DIAMOND, NUCLEATION AND GROWTH, CHEMICAL VAPOR DEPOSITION, DEPOSITION
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/138938
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