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DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE

KINGSLEY, CR; WHITAKER, TJ; WEE, ATS; JACKMAN, RB; FOORD, JS; (1995) DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , 29 (1-3) pp. 78-82. 10.1016/0921-5107(94)04034-2.

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Type: Article
Title: DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
Location: STRASBOURG, FRANCE
DOI: 10.1016/0921-5107(94)04034-2
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, GALLIUM NITRIDE, NITRIDES, SCHOTTKY BARRIER, THIN FILMS, THIN-FILMS, GAN, GROWTH, SAPPHIRE, SILICON, GAAS, PRECURSOR, DIODES, LAYER, ALN
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/138936
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