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Hydrogen "doped" thin film diamond field effect transistors for high power applications

Looi, HJ; Pang, LYS; Foord, JS; Jackman, RB; (1998) Hydrogen "doped" thin film diamond field effect transistors for high power applications. SOLID-STATE ELECTRONICS , 42 (12) pp. 2215-2223. 10.1016/S0038-1101(98)00218-4.

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Type: Article
Title: Hydrogen "doped" thin film diamond field effect transistors for high power applications
DOI: 10.1016/S0038-1101(98)00218-4
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, CHEMICAL-VAPOR-DEPOSITION, ELECTRICAL-PROPERTIES, DEVICE APPLICATIONS, RESISTIVITY, TRANSPORT
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/138934
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