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Dry etching techniques for GaAs ultra-high vacuum chamber integrated processing

Marshall, D; Jackman, RB; (1994) Dry etching techniques for GaAs ultra-high vacuum chamber integrated processing. Microelectronic Engineering , 25 (2-4) 287 - 292.

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Abstract

In-situ processing requires totally dry approaches to pattern generation to be developed. Of particular interest are beam driven reactions that can be localised without prior masking. This paper considers types of beams that may be utilised and the means by which these beams may drive chemical etching reactions. An ideal form of beam assisted reaction is proposed which requires an etching precursor which displays very different adsorption - desorption characteristics from the most commonly encountered etchant, chlorine. In an attempt to identify improved precursor compounds, the adsorption characteristics of dichloroethane and sulphuryl dichloride on GaAs(100) are reported and discussed; these are considered with regard to their use as chemically assisted ion beam and laser photothermal etching gases. © 1994.

Type:Article
Title:Dry etching techniques for GaAs ultra-high vacuum chamber integrated processing
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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