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Surface chemical routes to low contamination beam assisted GaAs etching

Marshall, D; Jackman, RB; (1993) Surface chemical routes to low contamination beam assisted GaAs etching. In: (pp. pp. 587-592).

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Abstract

In-situ processing requires totally dry approaches to pattern generation to be developed. Of particular interest are beam driven reactions that can be localised without prior masking. This paper considers the adsorption - desorption characteristics of chlorine, dichloroethane and sulphuryl chloride on GaAs(100). The surface reactivity in these systems is seen to vary considerably. The implications of this are considered with regard to their use as chemically assisted ion beam and laser photochemical etching gases.

Type: Proceedings paper
Title: Surface chemical routes to low contamination beam assisted GaAs etching
ISBN: 1558991743
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/138896
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