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ION BEAM-ASSISTED ETCHING OF SEMICONDUCTORS - SURFACE-CHEMISTRY VS SURFACE PHYSICS

JACKMAN, RB; (1993) ION BEAM-ASSISTED ETCHING OF SEMICONDUCTORS - SURFACE-CHEMISTRY VS SURFACE PHYSICS. VACUUM , 44 (3-4) pp. 239-243. 10.1016/0042-207X(93)90162-4.

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Type: Article
Title: ION BEAM-ASSISTED ETCHING OF SEMICONDUCTORS - SURFACE-CHEMISTRY VS SURFACE PHYSICS
DOI: 10.1016/0042-207X(93)90162-4
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, COLLISION CASCADES, ENERGY, SOLIDS, GAAS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/138883
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