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An impedance spectroscopic investigation of the electrical properties of delta-doped diamond structures

Tumilty, N; Welch, J; Lang, R; Wort, C; Balmer, R; Jackman, RB; (2009) An impedance spectroscopic investigation of the electrical properties of delta-doped diamond structures. J APPL PHYS , 106 (10) , Article 103707. 10.1063/1.3261759.

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Abstract

Impedance spectroscopy has been used to investigate the conductivity displayed by diamond doped with boron in an intrinsic-delta-layer-intrinsic multilayer system with differing delta-layer thicknesses. Carrier transport within 5 nm delta-layer structures is complex, being dominated by conduction in the interfacial regions between the delta-layer and the intrinsic regions, as well as conduction within the delta-layer itself. In the case of 3.2 nm thick delta-layers the situation appears improved with uncapped samples supporting only two conduction paths, one of which may be associated with transport outside of the delta-layer, the other low transport within the delta-layer complex diamond structures. Introduction of the capping layer creates a third conduction path associated with unwanted boron in the capping layer-delta-layer interface. (C) 2009 American Institute of Physics. [doi:10.1063/1.3261759]

Type:Article
Title:An impedance spectroscopic investigation of the electrical properties of delta-doped diamond structures
DOI:10.1063/1.3261759
Keywords:ELECTRONIC APPLICATIONS, DEPOSITED DIAMOND, CVD DIAMOND, THIN-FILMS, HYDROGEN, CHANNEL, DEVICES, FABRICATION, TRANSISTORS, STABILITY
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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