Bevilacqua, M; Tumilty, N; Mitra, C; Ye, HT; Feygelson, T; Butler, JE; Jackman, RB; (2010) Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study. J APPL PHYS , 107 (3) , Article 033716. 10.1063/1.3291118.
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Nanocrystalline diamond (NCD) has been grown using a nanodiamond seeding technique, leading to a dense form of this material, with grain sizes around 100 nm. The electrical properties of both intrinsic and lightly boron-doped NCD have been investigated using impedance spectroscopy and Hall effect measurements. For intrinsic material, both grain boundaries and grains themselves initially contribute to the frequency dependant impedance values recorded. However, boundary conduction can be removed and the films become highly resistive. Interestingly, the ac properties of these films are also excellent with a dielectric loss value similar to 0.004 for frequencies up to 10 MHz. The dielectric properties of these NCD films are therefore as good as high quality large grain polycrystalline diamond films. In the case of boron-doped material, p-type material with good carrier mobility values (10-50 cm(2)/V s) can be produced at carrier concentrations around 10(17) cm(-3).
|Title:||Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study|
|Keywords:||boron, carrier density, carrier mobility, diamond, dielectric losses, dielectric thin films, elemental semiconductors, grain boundaries, grain size, Hall effect, nanofabrication, nanostructured materials, semiconductor doping, semiconductor thin films, CHEMICAL-VAPOR-DEPOSITION, THIN-FILM DIAMOND, CVD DIAMOND, ELECTRICAL-TRANSPORT, DIELECTRIC-PROPERTIES, SURFACE CONDUCTIVITY, BORON, ULTRANANOCRYSTALLINE, EMISSION, HYDROGEN|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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