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Multiple conduction paths in boron delta-doped diamond structures

Tumilty, N; Welch, J; Ye, HT; Balmer, RS; Wort, C; Lang, R; Jackman, RB; (2009) Multiple conduction paths in boron delta-doped diamond structures. APPL PHYS LETT , 94 (5) , Article 052107. 10.1063/1.3075860.

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Abstract

Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-delta-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.

Type:Article
Title:Multiple conduction paths in boron delta-doped diamond structures
DOI:10.1063/1.3075860
Keywords:boron, diamond, electrical conductivity, elemental semiconductors, multilayers, IMPEDANCE MEASUREMENTS, FILMS, FABRICATION, TRANSISTORS
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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