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Robustness of Basal-Plane Antiferromagnetic Order and the J(eff)=1/2 State in Single-Layer Iridate Spin-Orbit Mott Insulators

Boseggia, S; Springell, R; Walker, HC; Ronnow, HM; Rueegg, C; Okabe, H; Isobe, M; ... McMorrow, DF; + view all (2013) Robustness of Basal-Plane Antiferromagnetic Order and the J(eff)=1/2 State in Single-Layer Iridate Spin-Orbit Mott Insulators. PHYSICAL REVIEW LETTERS , 110 (11) 10.1103/PhysRevLett.110.117207.

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Type: Article
Title: Robustness of Basal-Plane Antiferromagnetic Order and the J(eff)=1/2 State in Single-Layer Iridate Spin-Orbit Mott Insulators
DOI: 10.1103/PhysRevLett.110.117207
Keywords: Science & Technology, Physical Sciences, Physics, Multidisciplinary, Physics, HIGH-TEMPERATURE SUPERCONDUCTIVITY, SR2IRO4, PHYSICS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1388188
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