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Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices

Bevilacqua, M; Jackman, RB; (2009) Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices. APPL PHYS LETT , 95 (24) , Article 243501. 10.1063/1.3273378.

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Abstract

Deep UV detection using a single crystal diamond (SCD) substrate without a homoepitaxial layer has been demonstrated using a defect passivation treatment. Despite evidence of surface damage on the SCD, the treatments lead to highly effective photoconductive devices, displaying six-orders of discrimination between deep UV and visible light and a responsivity as high as 100 A/W, equivalent to an external quantum efficiency of 700, similar to the best values for devices based on high quality homoepitaxial layers. Impedance spectroscopic investigations suggest that the treatment used reduces the impact of less resistive surface material, most likely defects left from substrate polishing.

Type:Article
Title:Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices
DOI:10.1063/1.3273378
Keywords:diamond, electric impedance, passivation, photoconducting devices, photoconducting materials, photodetectors, ultraviolet detectors, THIN-FILM DIAMOND, CVD DIAMOND, UV PHOTODETECTORS, DETECTORS, IMPEDANCE, QUALITY
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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