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Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

Studer, P; Schofield, SR; Hirjibehedin, CF; Curson, NJ; (2013) Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy. APPLIED PHYSICS LETTERS , 102 (1) 10.1063/1.4772508.

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Type: Article
Title: Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy
DOI: 10.1063/1.4772508
Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, SI(001) SURFACE, SI, DOPANTS, GROWTH, BORON, MODEL
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1386214
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