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LOW-TEMPERATURE UV OXIDATION OF SIGE FOR PREPARATION OF GE NANOCRYSTALS IN SIO2

CRACIUN, V; READER, AH; VANDENHOUDT, DEW; BEST, SP; HUTTON, RS; ANDREI, A; BOYD, IW; (1995) LOW-TEMPERATURE UV OXIDATION OF SIGE FOR PREPARATION OF GE NANOCRYSTALS IN SIO2. THIN SOLID FILMS , 255 (1-2) pp. 290-294. 10.1016/0040-6090(94)05613-I.

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Type: Article
Title: LOW-TEMPERATURE UV OXIDATION OF SIGE FOR PREPARATION OF GE NANOCRYSTALS IN SIO2
Location: STRASBOURG, FRANCE
DOI: 10.1016/0040-6090(94)05613-I
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, GERMANIUM, NANOSTRUCTURES, OXIDATION, SILICON OXIDE, VISIBLE PHOTOLUMINESCENCE, SILICON
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1384204
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