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ULSI dielectrics: low-temperature silicon dioxides

Boyd, IW; (1995) ULSI dielectrics: low-temperature silicon dioxides. Materials Chemistry & Physics , 41 (4) pp. 266-274. 10.1016/0254-0584(95)01531-0.

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Abstract

The use of ultraviolet (UV) and vacuum ultraviolet light generated from low-pressure Hg lamps and also a new type of excimer lamp to stimulate the growth and/or deposition of ultrathin dielectric films is described. Growth enhancement of more than 50 times is found for UV oxidation of Si at 550 °C, providing growth rates of around 0.5 Å min-1. Even higher enhancement factors (but relatively lower growth rates) are obtained at lower temperatures. Compared with other commonly used lamps, the novel excimer sources are pseudo-continuous and produce high photon fluxes (more than a few watts) over large areas. Oxide, nitride and oxynitride layers have been deposited using such sources. The film growth rates and initial physical properties were determined using ellipsometry and Fourier transform infrared spectroscopy. A layered combination of silicon oxide, silicon nitride and silicon oxynitride has also been produced in the same reactor at temperatures below 300 °C using this deposition method. © 1995.

Type: Article
Title: ULSI dielectrics: low-temperature silicon dioxides
DOI: 10.1016/0254-0584(95)01531-0
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1384198
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