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GROWTH OF PURE AND DOPED CERIUM OXIDE THIN-FILM BILAYERS BY PULSED-LASER DEPOSITION

AMIRHAGHI, S; LI, YH; KILNER, JA; BOYD, IW; (1995) GROWTH OF PURE AND DOPED CERIUM OXIDE THIN-FILM BILAYERS BY PULSED-LASER DEPOSITION. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , 34 (2-3) pp. 192-198. 10.1016/0921-5107(95)01321-0.

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Type: Article
Title: GROWTH OF PURE AND DOPED CERIUM OXIDE THIN-FILM BILAYERS BY PULSED-LASER DEPOSITION
DOI: 10.1016/0921-5107(95)01321-0
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, THIN FILMS, CERUM OXIDE, X-RAY DIFFRACTION, PULSED LASER DEPOSITION, CEO2 BUFFER LAYERS, OPTICAL-PROPERTIES, EPITAXIAL-GROWTH, ULTRAHIGH-VACUUM, YBA2CU3O7 FILMS, TEMPERATURE, EVAPORATION, ABLATION, SILICON, DIOXIDE
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1384192
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