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Ultraviolet induced mechanisms in oxide film formation

Boyd, IW; (1997) Ultraviolet induced mechanisms in oxide film formation. Applied Surface Science , 109-11 pp. 538-543. 10.1016/S0169-4332(96)00631-9.

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Abstract

Relatively intense ultraviolet light can be generated using dielectric barrier discharges to form excimer mixtures of rare gases and rare-gas halides. The characteristics of the emission spectra of the excimers formed, from 126 to above 308 nm are found to be useful for thin film and surface processing. The underlying operating mechanisms of these sources, whose conversion efficiencies (from input electrical to output optical energy) can be as high as 15%, under optimum conditions, are described. These low cost, high power, large area excimer systems can provide an interesting and potentially very useful alternative to conventional Hg as discharge UV lamps for industrial large-scale UV processes. Their application towards oxide grown on silicon, and a range of other processes, is described.

Type: Article
Title: Ultraviolet induced mechanisms in oxide film formation
DOI: 10.1016/S0169-4332(96)00631-9
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1384177
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