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Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: the role of interactions of nanocrystals and oxygen

Shimizu-Iwayama, T; Hole, DE; Boyd, IW; (1999) Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: the role of interactions of nanocrystals and oxygen. JOURNAL OF PHYSICS-CONDENSED MATTER , 11 (34) pp. 6595-6604. 10.1088/0953-8984/11/34/312.

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Type: Article
Title: Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: the role of interactions of nanocrystals and oxygen
DOI: 10.1088/0953-8984/11/34/312
Keywords: Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, VISIBLE-LIGHT EMISSION, SILICON DIOXIDE FILMS, BEAM SYNTHESIS, ROOM-TEMPERATURE, POROUS SILICON, LUMINESCENCE, WAVELENGTH, EXCITONS
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1384153
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