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Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

Craciun, V; Boyd, IW; Perriere, J; Hutton, B; Nicholls, EJ; (1999) Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers. JOURNAL OF MATERIALS RESEARCH , 14 (9) pp. 3525-3529. 10.1557/JMR.1999.0477.

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Type: Article
Title: Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers
DOI: 10.1557/JMR.1999.0477
Keywords: Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, SILICON-GERMANIUM, QUANTUM-WELL, GE, PHOTOLUMINESCENCE, HETEROSTRUCTURES, NANOCRYSTALS, LUMINESCENCE, GEXSI1-X/SI, FILMS
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1384119
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