Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date.
|Title:||Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.|
|Open access status:||An open access publication|
|Keywords:||Arsenicals, Crystallization, Electric Conductivity, Equipment Design, Equipment Failure Analysis, Gallium, Indium, Lasers, Semiconductor, Materials Testing, Quantum Dots, Silicon|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science
UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
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