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Electrically tailored resistance switching in silicon oxide

Mehonic, A; Cueff, S; Wojdak, M; Hudziak, S; Labbe, C; Rizk, R; Kenyon, AJ; (2012) Electrically tailored resistance switching in silicon oxide. Nanotechnology , 23 (45) , Article 455201. 10.1088/0957-4484/23/45/455201.

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Resistive switching in a metal-free silicon-based material offers a compelling alternative to existing metal oxide-based resistive RAM (ReRAM) devices, both in terms of ease of fabrication and of enhanced device performance. We report a study of resistive switching in devices consisting of non-stoichiometric silicon-rich silicon dioxide thin films. Our devices exhibit multi-level switching and analogue modulation of resistance as well as standard two-level switching. We demonstrate different operational modes that make it possible to dynamically adjust device properties, in particular two highly desirable properties: nonlinearity and self-rectification. This can potentially enable high levels of device integration in passive crossbar arrays without causing the problem of leakage currents in common line semi-selected devices. Aspects of conduction and switching mechanisms are discussed, and scanning tunnelling microscopy (STM) measurements provide a more detailed insight into both the location and the dimensions of the conductive filaments.

Type: Article
Title: Electrically tailored resistance switching in silicon oxide
DOI: 10.1088/0957-4484/23/45/455201
Publisher version: http://dx.doi.org/10.1088/0957-4484/23/45/455201
Language: English
Additional information: PubMed ID: 23064085
URI: http://discovery.ucl.ac.uk/id/eprint/1364894
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