UCL logo

UCL Discovery

UCL home » Library Services » Electronic resources » UCL Discovery

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

Natrella, M; Rouvalis, E; Liu, CP; Liu, H; Renaud, CC; Seeds, AJ; (2012) InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy. Opt Express , 20 (17) 19279 - 19288. Gold open access

Abstract

We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

Type: Article
Title: InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Location: United States
Open access status: An open access publication
Language: English
Keywords: Arsenicals, Crystallization, Equipment Design, Equipment Failure Analysis, Gallium, Heavy Ions, Indium, Materials Testing, Phosphines, Photometry, Semiconductors
UCL classification: UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
URI: http://discovery.ucl.ac.uk/id/eprint/1362496
Downloads since deposit
0Downloads
Download activity - last month
Download activity - last 12 months
Downloads by country - last 12 months

Archive Staff Only

View Item View Item