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170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits

Rouvalis, E; Fice, MJ; Renaud, CC; Seeds, AJ; Chtioui, M; Van Dijk, F; ... Carpintero, G; + view all (2012) 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits. Optics Express , 20 (18) 20090 - 20095. 10.1364/OE.20.020090. Gold open access

Abstract

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications. © 2012 Optical Society of America.

Type:Article
Title:170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits
Open access status:An open access publication
DOI:10.1364/OE.20.020090
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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