Rouvalis, E; Fice, MJ; Renaud, CC; Seeds, AJ; Chtioui, M; Van Dijk, F; ... Carpintero, G; + view all (2012) 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits. Optics Express , 20 (18) 20090 - 20095. 10.1364/OE.20.020090. 
Abstract
We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications. © 2012 Optical Society of America.
| Type: | Article |
|---|---|
| Title: | 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits |
| Open access status: | An open access publication |
| DOI: | 10.1364/OE.20.020090 |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering |
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