Rouvalis, E;
Chtioui, M;
van Dijk, F;
Lelarge, F;
Fice, MJ;
Renaud, CC;
Carpintero, G;
(2012)
170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.
Opt Express
, 20
(18)
pp. 20090-20095.
Abstract
We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.
| Type: | Article |
|---|---|
| Title: | 170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits. |
| Location: | United States |
| Open access status: | An open access publication |
| Keywords: | Equipment Design, Equipment Failure Analysis, Indium, Microwaves, Phosphines, Photometry, Semiconductors |
| UCL classification: | UCL > School of BEAMS UCL > School of BEAMS > Faculty of Engineering Science |
| URI: | http://discovery.ucl.ac.uk/id/eprint/1362494 |
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