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170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.

Rouvalis, E; Chtioui, M; van Dijk, F; Lelarge, F; Fice, MJ; Renaud, CC; Carpintero, G; (2012) 170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits. Opt Express , 20 (18) pp. 20090-20095. Gold open access

Abstract

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

Type: Article
Title: 170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.
Location: United States
Open access status: An open access publication
Keywords: Equipment Design, Equipment Failure Analysis, Indium, Microwaves, Phosphines, Photometry, Semiconductors
UCL classification: UCL > School of BEAMS > Faculty of Engineering Science
UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
URI: http://discovery.ucl.ac.uk/id/eprint/1362494
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