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Photoemission of positronium from Si

Cassidy, DB; Hisakado, TH; Tom, HWK; Mills, AP; (2011) Photoemission of positronium from Si. Physical Review Letters , 107 (3) , Article 033401. 10.1103/PhysRevLett.107.033401. Green open access

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Abstract

We have observed that the amount of positronium (Ps) emitted from the surface of p-Si(100) is substantially increased if the sample is irradiated with 532 nm laser light just prior to the implantation of positrons. The energy of the emitted Ps has a constant value of ∼0.16eV and is independent of the Si temperature and the applied laser fluence, while the photoemission yield depends on both of these parameters. These observations are consistent with Ps production via a previously observed excitonlike positron surface state that is populated in response to the production of electron-hole pairs in the Si. Possible applications of Ps photoemission include probing surface electron dynamics on Si, the generation of ultrashort Ps or positron pulses using ps lasers, and efficient production of Ps in cryogenic environments. © 2011 American Physical Society.

Type: Article
Title: Photoemission of positronium from Si
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevLett.107.033401
Publisher version: http://dx.doi.org/10.1103/PhysRevLett.107.033401
Language: English
Additional information: © 2011 American Physical Society
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy
URI: https://discovery.ucl.ac.uk/id/eprint/1362297
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