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Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

Oberbeck, L; Curson, NJ; Hallam, T; Simmons, MY; Clark, RG; Bilger, G; (2004) Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy. Applied Physics Letters , 85 (8) 1359 - 1361. 10.1063/1.1784881.

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Abstract

The segregation of phosphorus atoms in silicon at the atomic scale was investigated using scanning tunneling microscopy (STM). The secondary ion mass spectrometry (SIMS) was also used to analyze phosphorus segregation in Si at 250 °C and room temperature (RT). It was observed that if the phosphorus atoms were encapsulated with 5 monolayers of epitaxial silicon at room temperature, the surface phosphorus density could be reduced to a few percent of the initial δ-doped density. It was observed that SIMS was unable to detect phosphorus segregation lengths in Si below the nanometer scale.

Type:Article
Title:Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy
DOI:10.1063/1.1784881
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology

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