Bourlange, A and Payne, DJ and Palgrave, RG and Zhang, H and Foord, JS and Egdell, RG and Jacobs, RMJ and Veal, TD and King, PDC and McConville, CF (2009) The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS , 106 (1) , Article ARTN 013703. 10.1063/1.3153966.
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|Title:||The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy|
|Keywords:||carrier density, conduction bands, doping profiles, indium compounds, infrared spectra, lattice constants, molecular beam epitaxial growth, photoelectron spectra, plasma materials processing, reflectivity, semiconductor doping, semiconductor growth, semiconductor materials, semiconductor thin films, spectral line intensity|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry|
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