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The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Bourlange, A; Payne, DJ; Palgrave, RG; Zhang, H; Foord, JS; Egdell, RG; ... McConville, CF; + view all (2009) The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS , 106 (1) , Article ARTN 013703. 10.1063/1.3153966.

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Type:Article
Title:The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy
DOI:10.1063/1.3153966
Keywords:carrier density, conduction bands, doping profiles, indium compounds, infrared spectra, lattice constants, molecular beam epitaxial growth, photoelectron spectra, plasma materials processing, reflectivity, semiconductor doping, semiconductor growth, semiconductor materials, semiconductor thin films, spectral line intensity
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry

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