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Electronic and Structural Properties of Sn<inf>x</inf>Ti<inf>1</inf><inf>-x</inf>O2 (0.0 e x e 0.1) solid solutions

Harunsani, MH; Oropeza, FE; Palgrave, RG; Egdell, RG; (2010) Electronic and Structural Properties of Sn<inf>x</inf>Ti<inf>1</inf><inf>-x</inf>O2 (0.0 e x e 0.1) solid solutions. Chemistry of Materials , 22 (4) pp. 1551-1558. 10.1021/cm902970u.

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Abstract

The electronic and structural properties of dilute solid solutions of SnO2 in TiO2 have been investigated. Samples of Sn xTi1-xO2 with 0.0 e x e 0.1 (i.e., 0-10% Sn doping) were prepared by solid state reaction of SnO2 and TiO 2 powders at 1200 C°followed by rapid quenching. Narrowing of the bandgap at low Sn doping level was observed through both diffuse reflectance spectroscopy and valence band photoemission spectroscopy. This provides an explanation of the visible light photocatalytic activity previously reported for this system. X-ray diffraction showed a positive deviation of the lattice parameters from Vegard's Law, whereas Raman spectra revealed a red-shift in the Eg and B1g peaks and a blue-shift in the A1g peak with increasing Sn content. © 2010 American Chemical Society.

Type: Article
Title: Electronic and Structural Properties of Sn<inf>x</inf>Ti<inf>1</inf><inf>-x</inf>O2 (0.0 e x e 0.1) solid solutions
DOI: 10.1021/cm902970u
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
URI: http://discovery.ucl.ac.uk/id/eprint/1360431
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