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Interfacial diffusion during growth of SnO<inf>2</inf>(110) on TiO <inf>2</inf>(110) by oxygen plasma assisted molecular beam epitaxy

Palgrave, RG; Bourlange, A; Payne, DJ; Foord, JS; Egdell, RG; (2009) Interfacial diffusion during growth of SnO<inf>2</inf>(110) on TiO <inf>2</inf>(110) by oxygen plasma assisted molecular beam epitaxy. Crystal Growth and Design , 9 (4) pp. 1793-1797. 10.1021/cg8009404.

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Abstract

Oxygen plasma-assisted molecular beam epitaxy was used to grow layers of SnO 2 on single-crystal ratile TiO 2 (110) substrates. Surface composition was studied by X-ray photoelectron spectroscopy, whereas secondary ion mass spectrometry was used to determine the depth distribution of Sn and Ti. For substrate temperatures below 600 °C, SnO 2 grows as an epitaxial film on top of the TiO 2 , but at higher temperatures there is evidence for pronounced interdiffusion between the substrate and the epilayer. At growth temperatures above 775 °C the Sn diffuses rapidly into the substrate to give Sn-doped TiO 2 rather than a distinct SnO 2 epilayer. The films were all highly (110) oriented but the lattice parameter of the deposited film decreased with increasing growth temperature, consistent with the formation of Ti x Sn 1-x O 2 solid solutions through interfacial solid-state reaction in a narrow temperature regime between 750 and 775 °C. © 2009 American Chemical Society.

Type: Article
Title: Interfacial diffusion during growth of SnO<inf>2</inf>(110) on TiO <inf>2</inf>(110) by oxygen plasma assisted molecular beam epitaxy
DOI: 10.1021/cg8009404
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
URI: http://discovery.ucl.ac.uk/id/eprint/1360427
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