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Deposition of BaHfO<inf>3</inf> dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD

Lupina, G; Lukosius, M; Wenger, C; Dudek, P; Kozlowski, G; Müssig, HJ; Abrutis, A; (2009) Deposition of BaHfO<inf>3</inf> dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD. Chemical Vapor Deposition , 15 (7-9) pp. 167-170. 10.1002/cvde.200804272.

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Abstract

A study was conducted to demonstrate the results of BaHfO3 deposition onto Si substrates using pulsed liquid injection metal-organic (MO)CVD. Growth of pure BaHfO3 was obtained at deposition temperatures of 600-700°C using a combination of Ba(thd)2 and Hf(thd)4 precursors. It was demonstrated that the resulting layers crystallized in the cubic perovskite structure (c-BaHfO3) and exhibited a high dielectric constant of ̃35. It was observed that the growth rate of BaCO3 from the Ba(thd)2 precursor was higher than that of HfO2 from Hf(thd)4 at the same temperature. Well-crystallized films of orthorhombic BaCO3 (o-BaCO3) and monoclinic HfO2 were obtained on Si(100) substrates starting at 500°C and 600°C.

Type: Article
Title: Deposition of BaHfO<inf>3</inf> dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD
DOI: 10.1002/cvde.200804272
UCL classification: UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry
URI: http://discovery.ucl.ac.uk/id/eprint/1357500
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