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Deposition of BaHfO<inf>3</inf> dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD

Lupina, G; Lukosius, M; Wenger, C; Dudek, P; Kozlowski, G; Müssig, HJ; Abrutis, A; ... Kubilius, V; + view all (2009) Deposition of BaHfO<inf>3</inf> dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD. Chemical Vapor Deposition , 15 (7-9) pp. 167-170. 10.1002/cvde.200804272.

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Abstract

A study was conducted to demonstrate the results of BaHfO 3 deposition onto Si substrates using pulsed liquid injection metal-organic (MO)CVD. Growth of pure BaHfO 3 was obtained at deposition temperatures of 600-700°C using a combination of Ba(thd) 2 and Hf(thd) 4 precursors. It was demonstrated that the resulting layers crystallized in the cubic perovskite structure (c-BaHfO 3 ) and exhibited a high dielectric constant of ̃35. It was observed that the growth rate of BaCO 3 from the Ba(thd) 2 precursor was higher than that of HfO 2 from Hf(thd) 4 at the same temperature. Well-crystallized films of orthorhombic BaCO 3 (o-BaCO 3 ) and monoclinic HfO 2 were obtained on Si(100) substrates starting at 500°C and 600°C.

Type: Article
Title: Deposition of BaHfO<inf>3</inf> dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD
DOI: 10.1002/cvde.200804272
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
URI: http://discovery.ucl.ac.uk/id/eprint/1357500
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