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Deposition of BaHfO dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD

Lupina, G; Lukosius, M; Wenger, C; Dudek, P; Kozlowski, G; Müssig, H-J; ... Kubilius, V; + view all (2009) Deposition of BaHfO dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD. Chemical Vapor Deposition , 15 (7-9) 167 - 170. 10.1002/cvde.200804272.

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Abstract

A study was conducted to demonstrate the results of BaHfO deposition onto Si substrates using pulsed liquid injection metal-organic (MO)CVD. Growth of pure BaHfO was obtained at deposition temperatures of 600-700°C using a combination of Ba(thd) and Hf(thd) precursors. It was demonstrated that the resulting layers crystallized in the cubic perovskite structure (c-BaHfO) and exhibited a high dielectric constant of ̃35. It was observed that the growth rate of BaCO from the Ba(thd) precursor was higher than that of HfO from Hf(thd) at the same temperature. Well-crystallized films of orthorhombic BaCO (o-BaCO) and monoclinic HfO were obtained on Si(100) substrates starting at 500°C and 600°C.

Type:Article
Title:Deposition of BaHfO dielectric layers for microelectronic applications by pulsed Liquid Injection MOCVD
DOI:10.1002/cvde.200804272
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry

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