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Study of the electroluminescence at 1.5 mu m of SiOx:Er layers made by reactive magnetron sputtering.
In: Loureiro, AG and Iglesias, NS and Rodriguez, MAA and Figueroa, EC, (eds.)
PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES.
(pp. 69 - 72).
We have studied the current transport and electroluminescence mechanisms of four layers of Si oxide co-doped with Si nanoclusters and erbium ions. Electrical measurements have identified different conduction mechanisms in separate high-field and low-field regimes, including Poole-Frenkel hopping. In particular, hopping through the Si-ncl is evidenced by C-V measurements. We have also observed an important contribution of defects from the oxide in the conduction, and no evidence of Fowler-Nordheim tunnelling. The results suggest that the electroluminescence from erbium ions in silicon-rich silicon dioxide is generated by electrons transported through the active layer by hopping from localised states, which we associate with silicon nanoclusters.
|Title:||Study of the electroluminescence at 1.5 mu m of SiOx:Er layers made by reactive magnetron sputtering.|
|Event:||7th Spanish Conference on Electron Devices|
|Location:||Univ Santiago de Compostelea, Santiago de Compostela, SPAIN|
|Dates:||2009-02-11 - 2009-02-13|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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