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Study of the electroluminescence at 1.5 mu m of SiOx:Er layers made by reactive magnetron sputtering.

Jambois, O; Berencen, Y; Seo, SY; Kenyon, AJ; Wojdak, M; Hijazi, K; ... Garrido, B; + view all (2009) Study of the electroluminescence at 1.5 mu m of SiOx:Er layers made by reactive magnetron sputtering. In: Loureiro, AG and Iglesias, NS and Rodriguez, MAA and Figueroa, EC, (eds.) PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES. (pp. 69 - 72). IEEE

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Abstract

We have studied the current transport and electroluminescence mechanisms of four layers of Si oxide co-doped with Si nanoclusters and erbium ions. Electrical measurements have identified different conduction mechanisms in separate high-field and low-field regimes, including Poole-Frenkel hopping. In particular, hopping through the Si-ncl is evidenced by C-V measurements. We have also observed an important contribution of defects from the oxide in the conduction, and no evidence of Fowler-Nordheim tunnelling. The results suggest that the electroluminescence from erbium ions in silicon-rich silicon dioxide is generated by electrons transported through the active layer by hopping from localised states, which we associate with silicon nanoclusters.

Type:Proceedings paper
Title:Study of the electroluminescence at 1.5 mu m of SiOx:Er layers made by reactive magnetron sputtering.
Event:7th Spanish Conference on Electron Devices
Location:Univ Santiago de Compostelea, Santiago de Compostela, SPAIN
Dates:2009-02-11 - 2009-02-13
ISBN-13:978-1-4244-2838-0
Keywords:ENERGY-TRANSFER
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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