Jambois, O and Berencen, Y and Seo, SY and Kenyon, AJ and Wojdak, M and Hijazi, K and Khomenkova, L and Gourbilleau, F and Rizk, R and Garrido, B (2009) Study of the electroluminescence at 1.5 mu m of SiOx:Er layers made by reactive magnetron sputtering. In: Loureiro, AG and Iglesias, NS and Rodriguez, MAA and Figueroa, EC, (eds.) PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES. (pp. 69 - 72). IEEE
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Abstract
We have studied the current transport and electroluminescence mechanisms of four layers of Si oxide co-doped with Si nanoclusters and erbium ions. Electrical measurements have identified different conduction mechanisms in separate high-field and low-field regimes, including Poole-Frenkel hopping. In particular, hopping through the Si-ncl is evidenced by C-V measurements. We have also observed an important contribution of defects from the oxide in the conduction, and no evidence of Fowler-Nordheim tunnelling. The results suggest that the electroluminescence from erbium ions in silicon-rich silicon dioxide is generated by electrons transported through the active layer by hopping from localised states, which we associate with silicon nanoclusters.
| Type: | Proceedings paper |
|---|---|
| Title: | Study of the electroluminescence at 1.5 mu m of SiOx:Er layers made by reactive magnetron sputtering. |
| Event: | 7th Spanish Conference on Electron Devices |
| Location: | Univ Santiago de Compostelea, Santiago de Compostela, SPAIN |
| Dates: | 2009-02-11 - 2009-02-13 |
| ISBN-13: | 978-1-4244-2838-0 |
| Keywords: | ENERGY-TRANSFER |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering |
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