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1300 nm wavelength InAs quantum dot photodetector grown on silicon

Sandall, I; Ng, JS; David, JPR; Tan, CH; Wang, T; Liu, H; (2012) 1300 nm wavelength InAs quantum dot photodetector grown on silicon. OPTICS EXPRESS , 20 (10) pp. 10446-10452. 10.1364/OE.20.010446. Gold open access

Type: Article
Title: 1300 nm wavelength InAs quantum dot photodetector grown on silicon
Open access status: An open access publication
DOI: 10.1364/OE.20.010446
Keywords: Science & Technology, Physical Sciences, Optics, OPTICS, IMPACT IONIZATION, NOISE CHARACTERISTICS, MODULATOR, ELECTROABSORPTION, HETEROSTRUCTURES, MULTIPLICATION, DIODES, LASERS
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Engineering Science
URI: http://discovery.ucl.ac.uk/id/eprint/1348685
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