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Intrinsic resistive switching in bulk SiOx films.
Presented at: UNSPECIFIED.
We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. Both unipolar and bipolar programming is demonstrated. Switching exhibits the pinched hysteresis I/V loop characteristic of RRAM/memristive systems, and on/off resistance ratios of 104:1 or higher can be easily achieved. Scanning Tunnelling Microscopy suggests that switchable conductive pathways are 10nm in diameter or smaller. © 2012 Materials Research Society.
|Type:||Conference item (UNSPECIFIED)|
|Title:||Intrinsic resistive switching in bulk SiOx films|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science
UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
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