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Intrinsic resistive switching in bulk SiO<inf>x</inf>films

Mehonic, A; Cueff, S; Wojdak, M; Hudziak, S; Jambois, O; Labbé, C; Garrido, B; ... Kenyon, AJ; + view all (2012) Intrinsic resistive switching in bulk SiO<inf>x</inf>films. Presented at: UNSPECIFIED.

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We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. Both unipolar and bipolar programming is demonstrated. Switching exhibits the pinched hysteresis I/V loop characteristic of RRAM/memristive systems, and on/off resistance ratios of 10 4 :1 or higher can be easily achieved. Scanning Tunnelling Microscopy suggests that switchable conductive pathways are 10nm in diameter or smaller. © 2012 Materials Research Society.

Type: Conference item (UNSPECIFIED)
Title: Intrinsic resistive switching in bulk SiO<inf>x</inf>films
DOI: 10.1557/opl.2012.1024
URI: http://discovery.ucl.ac.uk/id/eprint/1348505
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