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Growth and electrical characterisation of 6-doped boron layers on (111) diamond surfaces

Edgington, R; Sato, S; Ishiyama, Y; Morris, R; Jackman, RB; Kawarada, H; (2012) Growth and electrical characterisation of 6-doped boron layers on (111) diamond surfaces. JOURNAL OF APPLIED PHYSICS , 111 (3) 10.1063/1.3682760.

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Type: Article
Title: Growth and electrical characterisation of 6-doped boron layers on (111) diamond surfaces
DOI: 10.1063/1.3682760
Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DELTA-DOPED DIAMOND, CHEMICAL-VAPOR-DEPOSITION, FIELD-EFFECT TRANSISTOR, ELECTRONIC-PROPERTIES, TERMINATED DIAMOND, CHANNEL, FABRICATION, DEPENDENCE, DEVICES, FILMS
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Engineering Science
URI: http://discovery.ucl.ac.uk/id/eprint/1345858
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