Rouvalis, E and Chtioui, M and Tran, M and Lelarge, F and van Dijk, F and Fice, MJ and Renaud, CC and Carpintero, G and Seeds, AJ (2012) High-speed photodiodes for InP-based photonic integrated circuits. Optics Express , 20 (8) 9172 - 9177. 10.1364/OE.20.009172.
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We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).
|Title:||High-speed photodiodes for InP-based photonic integrated circuits|
|Open access status:||An open access publication. A version is also available from UCL Discovery.|
|Additional information:||©2012 Optical Society of America|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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