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High-speed photodiodes for InP-based photonic integrated circuits

Rouvalis, E; Chtioui, M; Tran, M; Lelarge, F; van Dijk, F; Fice, MJ; Renaud, CC; ... Seeds, AJ; + view all (2012) High-speed photodiodes for InP-based photonic integrated circuits. Optics Express , 20 (8) 9172 - 9177. 10.1364/OE.20.009172. Green open access

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We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).

Type: Article
Title: High-speed photodiodes for InP-based photonic integrated circuits
Location: United States
Open access status: An open access version is available from UCL Discovery
DOI: 10.1364/OE.20.009172
Publisher version: http://dx.doi.org/10.1364/OE.20.009172
Language: English
Additional information: ©2012 Optical Society of America
URI: http://discovery.ucl.ac.uk/id/eprint/1344762
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