Markiewicz, M; Voss, H; (2006) Electronic states in three dimensional quantum dot/wetting layer structures. In: Gavrilova, M and Gervasi, O and Kumar, V and Tan, CJK and Taniar, D and Lagana, A and Mun, Y and Choo, H, (eds.) COMPUTATIONAL SCIENCE AND ITS APPLICATIONS - ICCSA 2006, PT 1. (pp. 684 - 693). SPRINGER-VERLAG BERLIN
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Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.
|Title:||Electronic states in three dimensional quantum dot/wetting layer structures|
|Event:||International Conference on Computational Science and Its Applications (ICCSA 2006)|
|Dates:||2006-05-08 - 2006-08-11|
|Keywords:||NONLINEAR EIGENVALUE PROBLEMS, SIMULATION, RING, DOT|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Computer Science|
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