Markiewicz, M and Voss, H (2006) Electronic states in three dimensional quantum dot/wetting layer structures. In: Gavrilova, M and Gervasi, O and Kumar, V and Tan, CJK and Taniar, D and Lagana, A and Mun, Y and Choo, H, (eds.) COMPUTATIONAL SCIENCE AND ITS APPLICATIONS - ICCSA 2006, PT 1. (pp. 684 - 693). SPRINGER-VERLAG BERLIN
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Abstract
Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.
| Type: | Proceedings paper |
|---|---|
| Title: | Electronic states in three dimensional quantum dot/wetting layer structures |
| Event: | International Conference on Computational Science and Its Applications (ICCSA 2006) |
| Location: | Glasgow, SCOTLAND |
| Dates: | 2006-05-08 - 2006-08-11 |
| ISBN: | 3-540-34070-X |
| Keywords: | NONLINEAR EIGENVALUE PROBLEMS, SIMULATION, RING, DOT |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Computer Science |
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