Edgington, R and Ruslinda, AR and Sato, S and Ishiyama, Y and Tsuge, K and Ono, T and Kawarada, H and Jackman, RB (2012) Boron δ-doped (111) diamond solution gate field effect transistors. Biosensors and Bioelectronics , 33 (1) 152 - 157.
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|Title:||Boron δ-doped (111) diamond solution gate field effect transistors|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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