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The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates

Wang, T; Lee, A; Tutu, F; Seeds, A; Liu, H; Jiang, Q; Groom, K; (2012) The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates. APPLIED PHYSICS LETTERS , 100 (5) , Article ARTN 052113. 10.1063/1.3682314.

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Type: Article
Title: The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates
DOI: 10.1063/1.3682314
UCL classification: UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
URI: http://discovery.ucl.ac.uk/id/eprint/1342904
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