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The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates

Wang, T; Lee, A; Tutu, F; Seeds, A; Liu, H; Jiang, Q; Groom, K; (2012) The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates. Applied Physics Letters , 100 (5)

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Type: Article
Title: The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates
UCL classification: UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
URI: http://discovery.ucl.ac.uk/id/eprint/1342903
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