Charnvanichborikarn, S and Villis, BJ and Johnson, BC and Wong-Leung, J and McCallum, JC and Williams, JS and Jagadish, C (2010) Effect of boron on interstitial-related luminescence centers in silicon. APPLIED PHYSICS LETTERS , 96 (5) , Article ARTN 051906. 10.1063/1.3300836.
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|Title:||Effect of boron on interstitial-related luminescence centers in silicon|
|Keywords:||annealing, boron, doping profiles, elemental semiconductors, interstitials, photoluminescence, semiconductor doping, silicon|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology|
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