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Constant capacitance deep-level transient spectroscopy study of bulk traps and interface states in P implanted Si MOS capacitors

Villis, BJ and McCallum, JC and Lay, MDH and Gauja, E (2005) Constant capacitance deep-level transient spectroscopy study of bulk traps and interface states in P implanted Si MOS capacitors. In: Commad 04: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings. (pp. 113 - 116).

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Type:Proceedings paper
Title:Constant capacitance deep-level transient spectroscopy study of bulk traps and interface states in P implanted Si MOS capacitors
ISBN:0-7803-8820-8
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology

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